onsemi Dual 2 Type N-Channel Small Signal, 540 mA, 20 V Enhancement, 6-Pin SOT-563 NTZD3154NT1G
- RS Stock No.:
- 184-1406
- Mfr. Part No.:
- NTZD3154NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
SGD20.40
(exc. GST)
SGD22.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 4,600 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | SGD0.204 | SGD20.40 |
| 500 - 900 | SGD0.20 | SGD20.00 |
| 1000 - 1900 | SGD0.195 | SGD19.50 |
| 2000 - 2900 | SGD0.191 | SGD19.10 |
| 3000 + | SGD0.187 | SGD18.70 |
*price indicative
- RS Stock No.:
- 184-1406
- Mfr. Part No.:
- NTZD3154NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 7 V | |
| Maximum Power Dissipation Pd | 250mW | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Forward Voltage Vf | 0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Width | 1.3 mm | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 7 V | ||
Maximum Power Dissipation Pd 250mW | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Forward Voltage Vf 0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Width 1.3 mm | ||
Length 1.7mm | ||
Height 0.6mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This is a 20 V N-Channel Power MOSFET.
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
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