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Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

RS Stock No.:: 180-8014
Mfr. Part No.:: SI4204DY-T1-GE3
Manufacturer:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

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Subtotal (1 pack of 5 units)*

SGD14.20

(exc. GST)

SGD15.50

(inc. GST)

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Temporarily out of stock

Shipping from 24 August 2026

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Units	Per unit	Per Pack*
5 - 45	SGD2.84	SGD14.20
50 - 95	SGD2.742	SGD13.71
100 - 495	SGD2.604	SGD13.02
500 - 995	SGD2.476	SGD12.38
1000 +	SGD2.352	SGD11.76

*price indicative

RS Stock No.:: 180-8014
Mfr. Part No.:: SI4204DY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19.8A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.006Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.25W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Length	3.05mm
	Width	1.65 mm
	Height	1mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19.8A
	Maximum Drain Source Voltage Vds 20V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.006Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.25W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Length 3.05mm
	Width 1.65 mm
	Height 1mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC Converter

• Fixed Telecommunication

• Notebook PC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested