Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

RS Stock No.:: 180-7895
Mfr. Part No.:: SI3421DV-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

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Subtotal (1 pack of 20 units)*

SGD13.10

(exc. GST)

SGD14.28

(inc. GST)

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Last RS stock

Final 3,460 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
20 - 20	SGD0.655	SGD13.10
40 - 80	SGD0.623	SGD12.46
100 - 480	SGD0.592	SGD11.84
500 - 980	SGD0.562	SGD11.24
1000 +	SGD0.534	SGD10.68

*price indicative

RS Stock No.:: 180-7895
Mfr. Part No.:: SI3421DV-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	19.2mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	2.7W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.1mm
	Height	1.1mm
	Width	2.98 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 19.2mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 2.7W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.1mm
	Height 1.1mm
	Width 2.98 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• DC/DC converter

• For mobile computing/consumer

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested