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    N-Channel MOSFET, 25 A, 250 V, 8-Pin TDSON Infineon BSC600N25NS3GATMA1

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    Subtotal (1 reel of 5000 units)**

    SGD10,620.00

    (exc. GST)

    SGD11,575.00

    (inc. GST)

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    Temporarily out of stock - back order for despatch 14/07/2025, delivery within 4 working days from despatch date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per unit
    Per Reel**
    5000 +SGD2.124SGD10,620.00

    **price indicative

    RS Stock No.:
    178-7486
    Mfr. Part No.:
    BSC600N25NS3GATMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    25 A

    Maximum Drain Source Voltage

    250 V

    Package Type

    TDSON

    Series

    OptiMOS™ 3

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    60 mΩ

    Channel Mode

    Enhancement

    Maximum Power Dissipation

    125 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Length

    6.1mm

    Transistor Material

    Si

    Maximum Operating Temperature

    +150 °C

    Width

    5.35mm

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    22 nC @ 10 V

    Minimum Operating Temperature

    -55 °C

    Height

    1.1mm

    Forward Diode Voltage

    1.2V

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