Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2

RS Stock No.:: 178-7472
Mfr. Part No.:: BSS138NH6327XTSA2
Manufacturer:: Infineon

Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

SGD273.00

(exc. GST)

SGD297.00

(inc. GST)

FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28

Temporarily out of stock

18,000 unit(s) shipping from 04 February 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	SGD0.091	SGD273.00

*price indicative

RS Stock No.:: 178-7472
Mfr. Part No.:: BSS138NH6327XTSA2
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.83V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	360mW
	Maximum Operating Temperature	150°C
	Width	1.3mm
	Length	2.9mm
	Height	1mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.83V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 360mW
	Maximum Operating Temperature 150°C
	Width 1.3mm
	Length 2.9mm
	Height 1mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

BSS138N SIPMOS Small Signal Transistor Datasheet

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 6Ω Maximum Drain Source Resistance - BSS138NH6327XTSA2

This MOSFET is a compact N-channel enhancement device designed for low-power switching in surface-mount assemblies. It operates reliably across a wide temperature span for demanding environments and is supplied in a three-pin SOT-23 package suitable for automated PCB assembly. Its configuration supports controlled gate-driven switching within common low-voltage systems.

Features and Benefits:

• 60V drain voltage rating enables higher-voltage switching
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits

Applications

• Suitable for automotive sensor interface circuits
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics

What ambient temperatures can it be used in reliably?

It is rated for continuous operation from -55°C up to 150°C, accommodating extreme cold starts and elevated operating temperatures.

What mounting and package considerations should designers note?

The device is supplied in a SOT-23 surface-mount 3-pin package optimised for space-constrained PCBs and automated reflow soldering.

How does gate charge affect switching design?

With a typical gate charge of 1nC, gate driver requirements are modest, reducing required drive current and improving switching speed in low-energy applications.

What limits should be observed to avoid device stress?

Keep gate-source voltage within ±20V and ensure dissipation does not exceed 360mW under given thermal conditions to prevent overstress.