onsemi Type N-Channel MOSFET, 83 A, 40 V Enhancement, 4-Pin TO-252 NVD5C454NT4G
- RS Stock No.:
- 178-4640
- Mfr. Part No.:
- NVD5C454NT4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD18.91
(exc. GST)
SGD20.61
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 05 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD1.891 | SGD18.91 |
| 100 - 240 | SGD1.851 | SGD18.51 |
| 250 - 490 | SGD1.795 | SGD17.95 |
| 500 - 990 | SGD1.741 | SGD17.41 |
| 1000 + | SGD1.688 | SGD16.88 |
*price indicative
- RS Stock No.:
- 178-4640
- Mfr. Part No.:
- NVD5C454NT4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 56W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.25mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 56W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.25mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- VN
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance.Suitable for automotive applications.
Features
Low on-resistance
High current capability
PPAP capable
Benefits
Minimal conduction losses
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
End Products
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps
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