onsemi NTMFS3 N-Channel MOSFET, 83 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS3D1N04XMT1G
- RS Stock No.:
- 220-549
- Mfr. Part No.:
- NTMFS3D1N04XMT1G
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (10 units, on tapes of 10)*
SGD13.70
(exc. GST)
SGD14.90
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 1,500 unit(s) shipping from 18 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD1.37 | SGD13.70 |
| 100 - 240 | SGD1.299 | SGD12.99 |
| 250 - 490 | SGD1.203 | SGD12.03 |
| 500 - 990 | SGD1.105 | SGD11.05 |
| 1000 + | SGD1.069 | SGD10.69 |
*price indicative
- RS Stock No.:
- 220-549
- Mfr. Part No.:
- NTMFS3D1N04XMT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS3 | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS3 | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5.15mm | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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