Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

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RS Stock No.:
178-3703
Mfr. Part No.:
SiZ350DT-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 3 x 3

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.1nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

16.7W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

-55°C

Transistor Configuration

Dual

Height

0.75mm

Standards/Approvals

No

Width

3 mm

Length

3mm

Number of Elements per Chip

2

Automotive Standard

No

RoHS Status: Exempt

TrenchFET® Gen IV power MOSFET

High side and low side MOSFETs form optimized

combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates

efficiency for high frequency switching

APPLICATIONS

Synchronous buck

DC/DC conversion

Half bridge

POL

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