N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS Stock No.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

Price Each (On a Reel of 3000)

SGD0.376

(exc. GST)

SGD0.41

(inc. GST)

2 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD0.376	SGD1,128.00

**price indicative

RS Stock No.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	14.2 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	4V
Maximum Power Dissipation	24 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+150 °C
Width	3.15mm
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	8.5 nC @ 10 V
Length	3.15mm
Height	1.07mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

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