Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 178-0850
- Mfr. Part No.:
- IRFS9N60APBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
SGD142.50
(exc. GST)
SGD155.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD2.85 | SGD142.50 |
| 150 - 200 | SGD2.743 | SGD137.15 |
| 250 + | SGD2.572 | SGD128.60 |
*price indicative
- RS Stock No.:
- 178-0850
- Mfr. Part No.:
- IRFS9N60APBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | IRFS9N60A | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series IRFS9N60A | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Automotive Standard No | ||
Vishay IRFS9N60A Series Power MOSFET, 600V Maximum Drain Source Voltage, 9.2A Maximum Continuous Drain Current - IRFS9N60APBF
This power MOSFET is a high-voltage N-channel device designed for switching and power conversion tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for surface-mount integration on power assemblies where high-voltage capability and robust thermal handling are required.
Features and Benefits:
• 600V drain withstand voltage enabling high-voltage switching
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation
Applications
• Suitable for SMPS primary switch functions in power supplies
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits
What mounting format does it require for assembly?
It is supplied for surface mounting in a TO-263 package with three pins to suit standard heat-sinked PCB footprints.
What gate limits must be observed to avoid damage?
The gate must not be driven beyond ±30V relative to source to prevent gate oxide overstress.
How does thermal management influence performance?
With 170W rated dissipation and a 150 °C maximum junction temperature, adequate PCB copper and heatsinking are needed to maintain junction temperature under heavy load.
What environmental specification affects materials selection?
The component conforms to RoHS requirements, influencing soldering and material choices in assembly.
Related links
- Vishay IRFS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF
- Vishay IRFB9N60A Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IRFB9N60APBF
- Vishay IRFB9N60A Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh 9.2 A 3-Pin TO-247 STW11NK90Z
- STMicroelectronics MDmesh 9.2 A 3-Pin TO-247
- Vishay SiHB068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SiHB125N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263