Microchip 2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-G

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has drain-source resistance of 5ohms at a gate-source voltage of 10V. It has continuous drain current of 200mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Ease of paralleling
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C

• Amplifiers
• Converters
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
• Motor controls
• Power supply circuits
• Switches

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC