Toshiba Type N-Channel MOSFET, 10 μA, 250 V Enhancement, 3-Pin TO-252 TK8P25DA,RQ(S

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Subtotal (1 pack of 25 units)*

SGD18.375

(exc. GST)

SGD20.025

(inc. GST)

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  • 25 unit(s) ready to ship from another location
  • Plus 600 unit(s) shipping from 05 June 2026
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Units
Per unit
Per Pack*
25 - 25SGD0.735SGD18.38
50 - 100SGD0.72SGD18.00
125 - 225SGD0.697SGD17.43
250 - 600SGD0.676SGD16.90
625 +SGD0.656SGD16.40

*price indicative

RS Stock No.:
174-4116
Mfr. Part No.:
TK8P25DA,RQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10μA

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

55W

Maximum Operating Temperature

150°C

Height

2.3mm

Standards/Approvals

No

Length

6.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.

Low drain-source on-resistance

Low leakage current

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