Toshiba N-Channel MOSFET, 10 μA, 250 V Enhancement, 3-Pin TO-252 TK8P25DA,RQ(S

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Subtotal (1 pack of 25 units)*

SGD22.33

(exc. GST)

SGD24.33

(inc. GST)

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Units
Per unit
Per Pack*
25 - 25SGD0.893SGD22.33
50 - 100SGD0.874SGD21.85
125 - 225SGD0.846SGD21.15
250 - 600SGD0.82SGD20.50
625 +SGD0.796SGD19.90

*price indicative

RS Stock No.:
174-4116
Mfr. Part No.:
TK8P25DA,RQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10μA

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

55W

Typical Gate Charge Qg @ Vgs

16nC

Forward Voltage Vf

-1.7V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Width

6.1mm

Standards/Approvals

No

Height

2.3mm

Length

6.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.

Low drain-source on-resistance

Low leakage current

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