Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252 TK65S04N1L

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

SGD20.28

(exc. GST)

SGD22.11

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 2,830 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40SGD2.028SGD20.28
50 - 90SGD1.986SGD19.86
100 - 990SGD1.925SGD19.25
1000 +SGD1.868SGD18.68

*price indicative

Packaging Options:
RS Stock No.:
171-2494
Mfr. Part No.:
TK65S04N1L
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

39nC

Maximum Power Dissipation Pd

107W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Width

7 mm

Standards/Approvals

No

Length

6.5mm

Height

2.3mm

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

Related links