Toshiba Type P-Channel MOSFET, 60 A, 40 V Enhancement, 3-Pin TO-252 TJ60S04M3L
- RS Stock No.:
- 171-2485
- Mfr. Part No.:
- TJ60S04M3L
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD12.89
(exc. GST)
SGD14.05
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 85 unit(s) ready to ship from another location
- Plus 1,385 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.578 | SGD12.89 |
| 50 - 95 | SGD2.524 | SGD12.62 |
| 100 - 995 | SGD2.448 | SGD12.24 |
| 1000 + | SGD2.376 | SGD11.88 |
*price indicative
- RS Stock No.:
- 171-2485
- Mfr. Part No.:
- TJ60S04M3L
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Power Dissipation Pd | 90W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 7 mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Power Dissipation Pd 90W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 7 mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- JP
Applications
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
Related links
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 TJ15P04M3
- Infineon IPW Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-247 IPW65R060CFD7XKSA1
- Infineon IPW Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-247
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252