Toshiba Type P-Channel MOSFET, 3 A, 20 V Enhancement, 3-Pin UFM SSM3J135TU(TE85L)
- RS Stock No.:
- 756-2757
- Mfr. Part No.:
- SSM3J135TU(TE85L)
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD4.88
(exc. GST)
SGD5.32
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 60 unit(s) ready to ship from another location
- Plus 1,350 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.488 | SGD4.88 |
| 20 - 40 | SGD0.479 | SGD4.79 |
| 50 - 90 | SGD0.464 | SGD4.64 |
| 100 - 190 | SGD0.452 | SGD4.52 |
| 200 + | SGD0.443 | SGD4.43 |
*price indicative
- RS Stock No.:
- 756-2757
- Mfr. Part No.:
- SSM3J135TU(TE85L)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UFM | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 260mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 0.91V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Width | 2.1 mm | |
| Height | 0.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UFM | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 260mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 0.91V | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Width 2.1 mm | ||
Height 0.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
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