Toshiba Type N-Channel MOSFET, 2 A, 40 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

Bulk discount available
View bulk pricing option

Subtotal (1 reel of 3000 units)*

SGD510.00

(exc. GST)

SGD570.00

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 15,000 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Reel*
3000 - 3000SGD0.17SGD510.00
6000 - 6000SGD0.166SGD498.00
9000 +SGD0.16SGD480.00

*price indicative

RS Stock No.:
171-2402
Mfr. Part No.:
SSM3K339R
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.1nC

Maximum Operating Temperature

150°C

Height

0.7mm

Standards/Approvals

No

Length

2.9mm

Automotive Standard

No

COO (Country of Origin):
TH
Power Management Switches

DC-DC Converters

1.8-V gate drive voltage.

Low drain-source on-resistance

RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)

RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)

RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)

RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)

RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy