Infineon IRFR5305PBF Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252 IRFR5305TRLPBF
- RS Stock No.:
- 171-1909
- Mfr. Part No.:
- IRFR5305TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD27.94
(exc. GST)
SGD30.46
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 860 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | SGD1.397 | SGD27.94 |
| 100 - 480 | SGD1.367 | SGD27.34 |
| 500 - 980 | SGD1.325 | SGD26.50 |
| 1000 - 1980 | SGD1.286 | SGD25.72 |
| 2000 + | SGD1.248 | SGD24.96 |
*price indicative
- RS Stock No.:
- 171-1909
- Mfr. Part No.:
- IRFR5305TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | IRFR5305PBF | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 7.49 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-36-989 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series IRFR5305PBF | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 7.49 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-36-989 | ||
Non Compliant
The Infineon IRFR5305 is the 55V single P-channel HEXFET power MOSFET in a D-Pak package. The D-Pak is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.
Advanced process technology
Fast switching
Fully avalanche rated
Lead free
Related links
- Infineon IRFR5305PBF Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR5305TRPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
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- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263