Infineon IPP075N15N3 G Type N-Channel MOSFET, 100 A, 150 V Enhancement, 4-Pin TO-220 IPP075N15N3GXKSA1
- RS Stock No.:
- 170-2269
- Mfr. Part No.:
- IPP075N15N3GXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD133.95
(exc. GST)
SGD146.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 500 unit(s) shipping from 22 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD2.679 | SGD133.95 |
| 150 - 200 | SGD2.578 | SGD128.90 |
| 250 + | SGD2.417 | SGD120.85 |
*price indicative
- RS Stock No.:
- 170-2269
- Mfr. Part No.:
- IPP075N15N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | IPP075N15N3 G | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Height | 11.17mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series IPP075N15N3 G | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Height 11.17mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
Summary of Features:
Excellent switching performance
Worlds lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Halogen free
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Target Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
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