Infineon HEXFET Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-220 IRF3710ZPBF

RS Stock No.:: 165-7604
Mfr. Part No.:: IRF3710ZPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-220 IRF3710ZPBF

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Subtotal (1 tube of 50 units)*

SGD77.45

(exc. GST)

SGD84.40

(inc. GST)

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In Stock

Plus 1,000 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Tube*
50 - 100	SGD1.549	SGD77.45
150 - 200	SGD1.49	SGD74.50
250 +	SGD1.398	SGD69.90

*price indicative

RS Stock No.:: 165-7604
Mfr. Part No.:: IRF3710ZPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	82nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	160W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Height	8.77mm
	Length	10.54mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 82nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 160W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Height 8.77mm
	Length 10.54mm
	Automotive Standard No

COO (Country of Origin):: MX

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