Nexperia Type N-Channel MOSFET, 3.2 A, 12 V Enhancement, 4-Pin DFN
- RS Stock No.:
- 153-1958P
- Mfr. Part No.:
- PMXB40UNEZ
- Manufacturer:
- Nexperia
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View bulk pricing optionSubtotal 125 units (supplied on a continuous strip)*
SGD43.375
(exc. GST)
SGD47.25
(inc. GST)
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- Shipping from 09 December 2026
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Units | Per unit |
|---|---|
| 125 - 1225 | SGD0.347 |
| 1250 - 2475 | SGD0.298 |
| 2500 - 3725 | SGD0.279 |
| 3750 + | SGD0.263 |
*price indicative
- RS Stock No.:
- 153-1958P
- Mfr. Part No.:
- PMXB40UNEZ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 121mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Power Dissipation Pd | 8.33W | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.15mm | |
| Standards/Approvals | No | |
| Height | 0.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 121mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Power Dissipation Pd 8.33W | ||
Maximum Operating Temperature 150°C | ||
Length 1.15mm | ||
Standards/Approvals No | ||
Height 0.36mm | ||
Automotive Standard No | ||
12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Related links
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- Nexperia Type P-Channel MOSFET -30 V Enhancement, 4-Pin DFN