Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN PMXB65UPEZ
- RS Stock No.:
- 151-3145
- Mfr. Part No.:
- PMXB65UPEZ
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD15.60
(exc. GST)
SGD17.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 50 unit(s) shipping from 02 January 2026
- Plus 10,000 unit(s) shipping from 06 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | SGD0.312 | SGD15.60 |
| 250 - 1200 | SGD0.305 | SGD15.25 |
| 1250 - 2450 | SGD0.296 | SGD14.80 |
| 2500 - 3700 | SGD0.287 | SGD14.35 |
| 3750 + | SGD0.278 | SGD13.90 |
*price indicative
- RS Stock No.:
- 151-3145
- Mfr. Part No.:
- PMXB65UPEZ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3.2A | |
| Maximum Drain Source Voltage Vds | -12V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 880mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 8.33W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.15mm | |
| Width | 1.05 mm | |
| Height | 0.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3.2A | ||
Maximum Drain Source Voltage Vds -12V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 880mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 8.33W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Operating Temperature 150°C | ||
Length 1.15mm | ||
Width 1.05 mm | ||
Height 0.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 59 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
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