Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23 PMV27UPEAR
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
SGD18.25
(exc. GST)
SGD20.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 21 September 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | SGD0.73 | SGD18.25 |
| 250 - 600 | SGD0.704 | SGD17.60 |
| 625 - 1225 | SGD0.669 | SGD16.73 |
| 1250 - 2475 | SGD0.635 | SGD15.88 |
| 2500 + | SGD0.603 | SGD15.08 |
*price indicative
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -5.6A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4.15W | |
| Typical Gate Charge Qg @ Vgs | 14.7nC | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -5.6A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4.15W | ||
Typical Gate Charge Qg @ Vgs 14.7nC | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits
Related links
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