P-Channel MOSFET, 5.6 A, -20 V, 3-Pin SOT-23 Nexperia PMV27UPEAR
- RS Stock No.:
- 153-0707
- Mfr. Part No.:
- PMV27UPEAR
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 reel of 3000 units)**
SGD669.00
(exc. GST)
SGD729.00
(inc. GST)
6000 In stock for delivery within 4 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | SGD0.223 | SGD669.00 |
| 6000 - 12000 | SGD0.218 | SGD654.00 |
| 15000 - 27000 | SGD0.214 | SGD642.00 |
| 30000 + | SGD0.209 | SGD627.00 |
**price indicative
- RS Stock No.:
- 153-0707
- Mfr. Part No.:
- PMV27UPEAR
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.6 A | |
| Maximum Drain Source Voltage | -20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 63 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -0.95V | |
| Minimum Gate Threshold Voltage | -0.45V | |
| Maximum Power Dissipation | 4150 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 14.7 nC @ 10 V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Manufacturer Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.6 A | ||
Maximum Drain Source Voltage -20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 63 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -0.95V | ||
Minimum Gate Threshold Voltage -0.45V | ||
Maximum Power Dissipation 4150 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 14.7 nC @ 10 V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
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