Vishay SQ Type P-Channel Power MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-23 SQ2361ES-T1_GE3
- RS Stock No.:
- 152-6376
- Mfr. Part No.:
- SQ2361ES-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD18.425
(exc. GST)
SGD20.075
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Plus 125 unit(s) shipping from 05 January 2026
- Final 32,950 unit(s) shipping from 12 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 50 | SGD0.737 | SGD18.43 |
| 75 - 100 | SGD0.71 | SGD17.75 |
| 125 + | SGD0.665 | SGD16.63 |
*price indicative
- RS Stock No.:
- 152-6376
- Mfr. Part No.:
- SQ2361ES-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.177Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.177Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
TrenchFET® power MOSFET
Material categorization
Related links
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