Vishay SQ Type P-Channel MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 280-0007
- Mfr. Part No.:
- SQ2309CES-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD1,071.00
(exc. GST)
SGD1,167.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | SGD0.357 | SGD1,071.00 |
*price indicative
- RS Stock No.:
- 280-0007
- Mfr. Part No.:
- SQ2309CES-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.704Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.85V | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.704Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.85V | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
Related links
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