Vishay Si4848DY Type N-Channel MOSFET, 2.7 A, 150 V Enhancement, 8-Pin SOIC SI4848DY-T1-GE3
- RS Stock No.:
- 152-6374
- Mfr. Part No.:
- SI4848DY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD11.50
(exc. GST)
SGD12.55
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 20 unit(s) ready to ship from another location
- Plus 870 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD2.30 | SGD11.50 |
| 15 - 20 | SGD2.212 | SGD11.06 |
| 25 + | SGD2.072 | SGD10.36 |
*price indicative
- RS Stock No.:
- 152-6374
- Mfr. Part No.:
- SI4848DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | Si4848DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Height | 1.55mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series Si4848DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Height 1.55mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Halogen-free
TrenchFET® Power MOSFETs
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