DiodesZetex Dual DMP 2 Type P-Channel MOSFET, 5.2 A, 60 V Enhancement, 8-Pin SOIC DMPH6050SSD-13
- RS Stock No.:
- 146-4757
- Mfr. Part No.:
- DMPH6050SSD-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD10.41
(exc. GST)
SGD11.35
(inc. GST)
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Temporarily out of stock
- Shipping from 14 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.041 | SGD10.41 |
| 50 - 90 | SGD1.019 | SGD10.19 |
| 100 - 490 | SGD0.989 | SGD9.89 |
| 500 - 990 | SGD0.96 | SGD9.60 |
| 1000 + | SGD0.932 | SGD9.32 |
*price indicative
- RS Stock No.:
- 146-4757
- Mfr. Part No.:
- DMPH6050SSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Forward Voltage Vf | -0.7V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 3.95 mm | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Forward Voltage Vf -0.7V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 3.95 mm | ||
Height 1.5mm | ||
Length 4.95mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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