P-Channel MOSFET, 4.5 A, 60 V, 8-Pin SOIC Diodes Inc DMP6110SSS-13
- RS Stock No.:
- 921-1151
- Mfr. Part No.:
- DMP6110SSS-13
- Manufacturer:
- DiodesZetex
Subtotal (1 pack of 20 units)**
SGD11.84
(exc. GST)
SGD12.90
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
20 - 80 | SGD0.592 | SGD11.84 |
100 - 480 | SGD0.546 | SGD10.92 |
500 - 980 | SGD0.493 | SGD9.86 |
1000 - 2480 | SGD0.453 | SGD9.06 |
2500 + | SGD0.422 | SGD8.44 |
**price indicative
- RS Stock No.:
- 921-1151
- Mfr. Part No.:
- DMP6110SSS-13
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Manufacturer | DiodesZetex | |
Channel Type | P | |
Maximum Continuous Drain Current | 4.5 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 130 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 3.95mm | |
Length | 4.95mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 19.4 nC @ 10 V | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Manufacturer DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.95mm | ||
Length 4.95mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 19.4 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
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