Infineon CoolMOS C3 Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-220 SPA02N80C3XKSA1
- RS Stock No.:
- 145-9731
- Mfr. Part No.:
- SPA02N80C3XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD72.00
(exc. GST)
SGD78.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD1.44 | SGD72.00 |
| 150 - 200 | SGD1.386 | SGD69.30 |
| 250 + | SGD1.299 | SGD64.95 |
*price indicative
- RS Stock No.:
- 145-9731
- Mfr. Part No.:
- SPA02N80C3XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS C3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 30.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.15mm | |
| Standards/Approvals | No | |
| Width | 4.85 mm | |
| Length | 10.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS C3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 30.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 16.15mm | ||
Standards/Approvals No | ||
Width 4.85 mm | ||
Length 10.85mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SPA17N80C3XKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SPP17N80C3XKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SPP04N80C3XKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SPP11N80C3XKSA1