N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 Infineon IRFP7530PBF

RS Stock No.:: 145-9658
Mfr. Part No.:: IRFP7530PBF
Manufacturer:: Infineon

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 Infineon IRFP7530PBF

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Subtotal (1 tube of 25 units)**

SGD91.38

(exc. GST)

SGD99.60

(inc. GST)

550 In stock for delivery within 4 working days*

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Units	Per unit	Per Tube**
25 - 50	SGD3.655	SGD91.375
75 - 100	SGD3.518	SGD87.95
125 +	SGD3.298	SGD82.45

**price indicative

RS Stock No.:: 145-9658
Mfr. Part No.:: IRFP7530PBF
Manufacturer:: Infineon

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF

This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a vital component in advanced circuits used in automation and motor control.

Features & Benefits

• Continuous drain current of 195A improves operational efficiency
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability

Applications

• Suitable for brushed motor drive
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics

What are the benefits of using it in high-current applications?

Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.

How does temperature affect performance?

Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.

Can it be integrated into existing circuits?

Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.

What should be considered for effective heat dissipation?

To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.

Is it suitable for use in automotive applications?

Yes, its robust specifications meet the requirements of automotive applications, providing a suitable choice in high-temperature and high-power settings.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	195 A
Maximum Drain Source Voltage	60 V
Package Type	TO-247
Series	StrongIRFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	341 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Width	5.31mm
Typical Gate Charge @ Vgs	274 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	15.87mm
Height	20.7mm
Minimum Operating Temperature	-55 °C