N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

RS Stock No.:: 145-9306
Mfr. Part No.:: IPI086N10N3GXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

This image is representative of the product range

Bulk discount available

Price Each (In a Tube of 50)

SGD1.597

(exc. GST)

SGD1.741

(inc. GST)

1350 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 - 100	SGD1.597	SGD79.85
150 - 200	SGD1.538	SGD76.90
250 +	SGD1.442	SGD72.10

**price indicative

RS Stock No.:: 145-9306
Mfr. Part No.:: IPI086N10N3GXKSA1
Manufacturer:: Infineon

IPP086N10N3 G, IPI086N10N3 G, IPB083N10N3 G, IPD082N10N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	42 nC @ 10 V
Width	4.572mm
Length	10.36mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	11.177mm

N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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