Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-262 IPI086N10N3GXKSA1
- RS Stock No.:
- 145-9306
- Mfr. Part No.:
- IPI086N10N3GXKSA1
- Manufacturer:
- Infineon
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SGD97.45
(exc. GST)
SGD106.20
(inc. GST)
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In Stock
- 1,150 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD1.949 | SGD97.45 |
| 150 - 200 | SGD1.876 | SGD93.80 |
| 250 + | SGD1.759 | SGD87.95 |
*price indicative
- RS Stock No.:
- 145-9306
- Mfr. Part No.:
- IPI086N10N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 3 | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Height | 11.177mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 3 | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Height 11.177mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™ 3 Series MOSFET, 80A Maximum Continuous Drain Current, 125W Maximum Power Dissipation - IPI086N10N3GXKSA1
This MOSFET is designed for high-efficiency power management applications and is suitable for various sectors, including automation and electronics. With a continuous drain current of 80A and a maximum drain-source voltage of 100V, it offers a dependable and efficient solution for electronic systems.
Features & Benefits
• N-channel design optimises electrical performance
• Low RDS(on) reduces power losses
• High power dissipation capability accommodates intensive applications
• Enhanced gate threshold improves switching efficiency
• Through hole mounting allows easy integration into circuits
Applications
• Used for high-frequency switching in power supplies
• Facilitates synchronous rectification in converter circuits
• Suitable for industrial automation systems requiring efficient power control
• Applied in various electronic devices for enhanced energy efficiency
• Appropriate for automotive requiring consistent performance
What is the significance of the low RDS(on) in this device?
The low RDS(on) value minimises energy losses during switching, increasing overall system performance.
How does the MOSFET handle high temperatures?
It is designed to function at temperatures up to 175°C, ensuring consistent performance even in challenging environmental conditions.
What mounting type does this component require?
It features a through hole mounting design that facilitates straightforward integration into existing PCB layouts.
Is it suitable for use in synchronous rectification?
Yes, it is specifically designed for efficient synchronous rectification in power electronics, promoting overall energy savings.
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-262
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-262
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD082N10N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB083N10N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP072N10N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1