Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-220 IPP120P04P4L03AKSA1

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Subtotal (1 tube of 50 units)*

SGD225.50

(exc. GST)

SGD246.00

(inc. GST)

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Last RS stock
  • Final 1,100 unit(s), ready to ship from another location
Units
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Per Tube*
50 - 100SGD4.51SGD225.50
150 - 200SGD4.341SGD217.05
250 +SGD4.07SGD203.50

*price indicative

RS Stock No.:
145-9267
Mfr. Part No.:
IPP120P04P4L03AKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

Power Transistor

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

OptiMOS P

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

136W

Typical Gate Charge Qg @ Vgs

180nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC, RoHS

Width

4.4 mm

Length

10mm

Height

15.65mm

Automotive Standard

AEC

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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