Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 145-9198
Mfr. Part No.:: IRFB4410ZPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

SGD82.75

(exc. GST)

SGD90.20

(inc. GST)

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In Stock

650 unit(s) ready to ship from another location

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Units	Per unit	Per Tube*
50 - 100	SGD1.655	SGD82.75
150 - 200	SGD1.593	SGD79.65
250 +	SGD1.494	SGD74.70

*price indicative

RS Stock No.:: 145-9198
Mfr. Part No.:: IRFB4410ZPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82 mm
	Length	10.66mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 9.02mm
	Width 4.82 mm
	Length 10.66mm
	Automotive Standard No

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