N-Channel MOSFET, 97 A, 100 V, 3-Pin D2PAK Infineon IRFS4410ZTRLPBF
- RS Stock No.:
- 145-8932
- Mfr. Part No.:
- IRFS4410ZTRLPBF
- Manufacturer:
- Infineon
Subtotal (1 reel of 800 units)**
SGD1,334.40
(exc. GST)
SGD1,454.40
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Reel** |
|---|---|---|
| 800 - 1600 | SGD1.668 | SGD1,334.40 |
| 2400 - 3200 | SGD1.606 | SGD1,284.80 |
| 4000 + | SGD1.505 | SGD1,204.00 |
**price indicative
- RS Stock No.:
- 145-8932
- Mfr. Part No.:
- IRFS4410ZTRLPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 97 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 11.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 97 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 11.3mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 83 nC @ 10 V | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
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