Toshiba U-MOSVIII-H N-Channel MOSFET, 56 A, 30 V, 8-Pin TSON TPN6R003NL,LQ(S
- RS Stock No.:
- 133-2816P
- Mfr. Part No.:
- TPN6R003NL,LQ(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
SGD45.50
(exc. GST)
SGD49.60
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 100 - 180 | SGD0.455 |
| 200 - 980 | SGD0.414 |
| 1000 - 1980 | SGD0.38 |
| 2000 + | SGD0.35 |
*price indicative
- RS Stock No.:
- 133-2816P
- Mfr. Part No.:
- TPN6R003NL,LQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSON | |
| Series | U-MOSVIII-H | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.1mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Length | 3.1mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.85mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSON | ||
Series U-MOSVIII-H | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.1mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Length 3.1mm | ||
Forward Diode Voltage 1.2V | ||
Height 0.85mm | ||
MOSFET Transistors, Toshiba
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