Toshiba U-MOSVIII-H N-Channel MOSFET, 38 A, 30 V Enhancement, 8-Pin SOP TPH8R903NL,LQ(S
- RS Stock No.:
- 133-2810
- Mfr. Part No.:
- TPH8R903NL,LQ(S
- Manufacturer:
- Toshiba
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Bulk discount available
View bulk pricing optionsSubtotal (20 units, in packs of 20)*
SGD13.18
(exc. GST)
SGD14.36
(inc. GST)
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In Stock
- Plus 40 unit(s) shipping from 05 October 2026
- Plus 380 unit(s) shipping from 12 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | SGD0.659 | SGD13.18 |
| 100 - 180 | SGD0.646 | SGD12.92 |
| 200 - 980 | SGD0.632 | SGD12.64 |
| 1000 - 1980 | SGD0.622 | SGD12.44 |
| 2000 + | SGD0.613 | SGD12.26 |
*price indicative
- RS Stock No.:
- 133-2810
- Mfr. Part No.:
- TPH8R903NL,LQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOP | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 9.8nC | |
| Maximum Power Dissipation Pd | 24W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5mm | |
| Height | 950μm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOP | ||
Series U-MOSVIII-H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 9.8nC | ||
Maximum Power Dissipation Pd 24W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5mm | ||
Height 950μm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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