Texas Instruments NexFET Type N-Channel MOSFET, 157 A, 80 V Enhancement, 8-Pin VSON CSD19502Q5BT
- RS Stock No.:
- 133-0154
- Mfr. Part No.:
- CSD19502Q5BT
- Manufacturer:
- Texas Instruments
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD10.26
(exc. GST)
SGD11.18
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 4 | SGD5.13 | SGD10.26 |
| 6 - 8 | SGD4.935 | SGD9.87 |
| 10 + | SGD4.63 | SGD9.26 |
*price indicative
- RS Stock No.:
- 133-0154
- Mfr. Part No.:
- CSD19502Q5BT
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | VSON | |
| Series | NexFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 195W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type VSON | ||
Series NexFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 195W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Related links
- Texas Instruments NexFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin VSON
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSON
- Texas Instruments NexFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin VSON CSD18502Q5B
- Texas Instruments NexFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin VSON
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSON CSD19531Q5AT
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSON
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSON CSD25404Q3T
- Texas Instruments NexFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SON