Texas Instruments NexFET N-Channel MOSFET, 110 A, 100 V, 8-Pin VSONP CSD19531Q5AT
- RS Stock No.:
- 162-8145
- Mfr. Part No.:
- CSD19531Q5AT
- Manufacturer:
- Texas Instruments
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 250 units)*
SGD528.75
(exc. GST)
SGD576.25
(inc. GST)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 500 | SGD2.115 | SGD528.75 |
| 750 - 1000 | SGD2.036 | SGD509.00 |
| 1250 + | SGD1.909 | SGD477.25 |
*price indicative
- RS Stock No.:
- 162-8145
- Mfr. Part No.:
- CSD19531Q5AT
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 7.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.3V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Length | 6.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type VSONP | ||
Series NexFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 7.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Length 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
N-Channel NexFET™ Power MOSFET, Texas Instruments
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Texas Instruments
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