Infineon CoolMOS CE N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

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Subtotal (1 pack of 25 units)*

SGD13.40

(exc. GST)

SGD14.60

(inc. GST)

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Units
Per unit
Per Pack*
25 - 100SGD0.536SGD13.40
125 - 475SGD0.517SGD12.93
500 - 975SGD0.491SGD12.28
1000 - 2475SGD0.466SGD11.65
2500 +SGD0.443SGD11.08

*price indicative

Packaging Options:
RS Stock No.:
130-0911
Mfr. Part No.:
IPN50R1K4CEATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

-30V, +30V

Typical Gate Charge Qg @ Vgs

8.2nC

Forward Voltage Vf

830mV

Maximum Operating Temperature

150°C

Length

6.7mm

Height

1.7mm

Standards/Approvals

No

Width

3.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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