Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin IPAK TK8Q60W,S1VQ(S
- RS Stock No.:
- 125-0598P
- Mfr. Part No.:
- TK8Q60W,S1VQ(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal 50 units (supplied in a tube)*
SGD44.30
(exc. GST)
SGD48.30
(inc. GST)
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Units | Per unit |
|---|---|
| 50 - 90 | SGD0.886 |
| 100 - 240 | SGD0.804 |
| 250 - 490 | SGD0.738 |
| 500 + | SGD0.681 |
*price indicative
- RS Stock No.:
- 125-0598P
- Mfr. Part No.:
- TK8Q60W,S1VQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | IPAK (TO-251) | |
| Series | DTMOSIV | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 80 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.65mm | |
| Typical Gate Charge @ Vgs | 18.5 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 2.3mm | |
| Forward Diode Voltage | 1.7V | |
| Height | 7.12mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type IPAK (TO-251) | ||
Series DTMOSIV | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 80 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 6.65mm | ||
Typical Gate Charge @ Vgs 18.5 nC @ 10 V | ||
Transistor Material Si | ||
Width 2.3mm | ||
Forward Diode Voltage 1.7V | ||
Height 7.12mm | ||
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