onsemi Type P-Channel MOSFET, 760 mA, 20 V Enhancement, 3-Pin SC-89
- RS Stock No.:
- 124-5403
- Mfr. Part No.:
- NTE4151PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD432.00
(exc. GST)
SGD471.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 21 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.144 | SGD432.00 |
| 6000 - 12000 | SGD0.141 | SGD423.00 |
| 15000 - 27000 | SGD0.137 | SGD411.00 |
| 30000 + | SGD0.133 | SGD399.00 |
*price indicative
- RS Stock No.:
- 124-5403
- Mfr. Part No.:
- NTE4151PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 760mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Power Dissipation Pd | 310mW | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Height | 0.8mm | |
| Width | 0.95 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 760mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Power Dissipation Pd 310mW | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Height 0.8mm | ||
Width 0.95 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-89 NTE4151PT1G
- onsemi NTA Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 NTA4151PT1G
- onsemi NTA Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-75
- Vishay Si1077X Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-89
- Vishay Si1077X Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-89 SI1077X-T1-GE3
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-89
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-89 FDY1002PZ
- DiodesZetex DMG1013T Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-89