DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SOT-563 DMC2400UV-7
- RS Stock No.:
- 122-1464
- Mfr. Part No.:
- DMC2400UV-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD375.00
(exc. GST)
SGD408.00
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.125 | SGD375.00 |
| 6000 - 9000 | SGD0.124 | SGD372.00 |
| 12000 - 27000 | SGD0.121 | SGD363.00 |
| 30000 - 57000 | SGD0.117 | SGD351.00 |
| 60000 + | SGD0.102 | SGD306.00 |
*price indicative
- RS Stock No.:
- 122-1464
- Mfr. Part No.:
- DMC2400UV-7
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 700mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Forward Voltage Vf | 700mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | -12V, -8V, +12V, +8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Width | 1.25mm | |
| Length | 1.7mm | |
| Height | 600μm | |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, J-STD-020 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 700mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Forward Voltage Vf 700mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs -12V, -8V, +12V, +8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Width 1.25mm | ||
Length 1.7mm | ||
Height 600μm | ||
Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, J-STD-020 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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