Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70 BSS816NWH6327XTSA1
- RS Stock No.:
- 110-7113
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 300 units)*
SGD39.90
(exc. GST)
SGD43.50
(inc. GST)
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In Stock
- 32,700 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 300 - 300 | SGD0.133 | SGD39.90 |
| 600 - 2700 | SGD0.123 | SGD36.90 |
| 3000 - 5700 | SGD0.098 | SGD29.40 |
| 6000 - 14700 | SGD0.084 | SGD25.20 |
| 15000 + | SGD0.076 | SGD22.80 |
*price indicative
- RS Stock No.:
- 110-7113
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Width | 1.25 mm | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Width 1.25 mm | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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