STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 103-2000
- Mfr. Part No.:
- STF26NM60N
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD272.75
(exc. GST)
SGD297.30
(inc. GST)
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In Stock
- 2,100 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD5.455 | SGD272.75 |
| 100 - 150 | SGD4.819 | SGD240.95 |
| 200 - 450 | SGD4.619 | SGD230.95 |
| 500 - 950 | SGD4.145 | SGD207.25 |
| 1000 + | SGD4.00 | SGD200.00 |
*price indicative
- RS Stock No.:
- 103-2000
- Mfr. Part No.:
- STF26NM60N
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 16.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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