STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 STW20NM60

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SGD183.30

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SGD199.80

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30 - 90SGD6.11SGD183.30-
120 +SGD5.805SGD174.15SGD36.60

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RS Stock No.:
151-453
Mfr. Part No.:
STW20NM60
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.29Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

50°C

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Length

34.95mm

Height

5.15mm

Width

15.75mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET associates the multiple drain process with the company’s Power MESH horizontal layout. The resulting product has an outstanding low on resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

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