STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP
- RS Stock No.:
- 103-1568
- Mfr. Part No.:
- STE40NC60
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 10 units)*
SGD523.07
(exc. GST)
SGD570.15
(inc. GST)
Add 10 units to get free delivery
Temporarily out of stock
- Shipping from 03 August 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 20 | SGD52.307 | SGD523.07 |
| 30 - 40 | SGD50.346 | SGD503.46 |
| 50 + | SGD47.199 | SGD471.99 |
*price indicative
- RS Stock No.:
- 103-1568
- Mfr. Part No.:
- STE40NC60
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh, SuperMESH | |
| Package Type | ISOTOP | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 460W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 307.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.2mm | |
| Standards/Approvals | No | |
| Height | 9.1mm | |
| Width | 25.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh, SuperMESH | ||
Package Type ISOTOP | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 460W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 307.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 38.2mm | ||
Standards/Approvals No | ||
Height 9.1mm | ||
Width 25.5 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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