Microchip Half Bridge Phase Leg SiC MOSFET N channel-Channel MOSFET Modules, 266 A, 1200 V Enhancement
- RS Stock No.:
- 931-018
- Mfr. Part No.:
- MSCSMC120AM04TBZ2AEG
- Manufacturer:
- Microchip
N
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SGD225.81
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SGD246.13
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Units | Per unit |
|---|---|
| 1 + | SGD225.81 |
*price indicative
- RS Stock No.:
- 931-018
- Mfr. Part No.:
- MSCSMC120AM04TBZ2AEG
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET Modules | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 266A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | Phase Leg SiC MOSFET | |
| Mount Type | Direct Mount | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 766W | |
| Typical Gate Charge Qg @ Vgs | 726nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Forward Voltage Vf | 4.7V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET Modules | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 266A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series Phase Leg SiC MOSFET | ||
Mount Type Direct Mount | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 766W | ||
Typical Gate Charge Qg @ Vgs 726nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23V | ||
Forward Voltage Vf 4.7V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip Advanced power module offers a highly efficient phase leg solution, designed specifically for demanding applications where reliability and performance are critical.
Utilises Silicon Carbide technology for reduced energy loss
Features low R over temperature drift, ensuring stable operation
Incorporates an internal thermistor for precise temperature oversight
Delivers outstanding performance in high-frequency environments
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