STMicroelectronics STL059N N-Channel MOSFET, 420 A, 40 V Enhancement, 8-Pin PowerFLAT STL059N4S8AG
- RS Stock No.:
- 820-272
- Mfr. Part No.:
- STL059N4S8AG
- Manufacturer:
- STMicroelectronics
N
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- RS Stock No.:
- 820-272
- Mfr. Part No.:
- STL059N4S8AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 420A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STL059N | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 187W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 275nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 5.4mm | |
| Height | 1mm | |
| Length | 6.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 420A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STL059N | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 187W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 275nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 5.4mm | ||
Height 1mm | ||
Length 6.1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics a 40 V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8, the new dedicated STripFET F8 based technology aimed for Power distribution applications, featuring an enhanced trench gate structure.
AEC-Q101 qualified
MSL1 grade
175 °C operating temperature
100% avalanche tested
Wettable flank package
Extremely low RDS(on)
Logic level
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