STMicroelectronics MDmesh K5 N-Channel Power MOSFET, 6 A, 1.2 kV Enhancement Mode, 3-Pin H2PAK-2 ST2H8N120K5AG

N

Subtotal (1 reel of 1000 units)*

SGD5,184.00

(exc. GST)

SGD5,651.00

(inc. GST)

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1000 +SGD5.184SGD5,184.00

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RS Stock No.:
814-401
Mfr. Part No.:
ST2H8N120K5AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

H2PAK-2

Series

MDmesh K5

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

1.65Ω

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

165W

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10.98mm

Height

15.55mm

Length

10.98mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics N channel power MOSFET delivers reliable High voltage performance for demanding applications, ensuring optimal efficiency and power density in automotive environments.

Automotive-grade, AEC-Q101 qualified for enhanced reliability

Ultra-low gate charge and very low figure of merit for reduced power loss

1200 V maximum drain-source voltage with a maximum drain current of 6 A

Designed with Advanced MDmesh K5 technology for superior thermal performance

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