STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 6 A, 1200 V Enhancement, 3-Pin TO-247 STW8N120K5

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Subtotal (1 tube of 30 units)*

SGD273.36

(exc. GST)

SGD297.96

(inc. GST)

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Units
Per unit
Per Tube*
30 +SGD9.112SGD273.36

*price indicative

RS Stock No.:
151-922
Mfr. Part No.:
STW8N120K5
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

1200V

Series

MDmesh K5

Package Type

TO-247

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

130W

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

13.7nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

Zener protected

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